Search results for "Transparent conductive oxides"

showing 2 items of 2 documents

Nanostructuring thin Au films on transparent conductive oxide substrates

2013

Fabrication processes of Au nanostructures on indium-tin-oxide (ITO) surface by simple, versatile, and low-cost bottom-up methodologies are investigated in this work. A first methodology exploits the patterning effects induced by nanosecond laser irradiations on thin Au films deposited on ITO surface. We show that after the laser irradiations, the Au film break-up into nanoclusters whose mean size and surface density are tunable by the laser fluence. A second methodology exploits, instead, the patterning effects of standard furnace thermal processes on the Au film deposited on the ITO. We observe, in this case, a peculiar shape evolution from pre-formed nanoclusters during the Au deposition…

NanoclusterLaser annealingMaterials scienceNanostructureFabricationNanoringPatterning effectGold depositAnnealing (metallurgy)NanotechnologyFluenceSettore ING-INF/01 - Elettronicalaw.inventionNanoclusterslawThermalDeposition stageAuGeneral Materials ScienceNanostructuringTransparent conducting filmDepositMechanical EngineeringNanoringsTransparent conductive oxides Conductive filmAnnealing temperatureCondensed Matter PhysicsLaserAu; ITO; NanostructuringFurnace annealingNanostructuresNanostructured materialFabrication proceMechanics of MaterialsOxide films GoldITO
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Light absorption and conversion in solar cell based on Si:O alloy

2013

Thin film Si:O alloys have been grown by plasma enhanced chemical vapor deposition, as intrinsic or highly doped (1 to 5 at. % of B or P dopant) layers. UV-visible/near-infrared spectroscopy revealed a great dependence of the absorption coefficient and of the optical gap (Eg) on the dopant type and concentration, as Eg decreases from 2.1 to 1.9 eV, for the intrinsic or highly p-doped sample, respectively. Thermal annealing up to 400 °C induces a huge H out-diffusion which causes a dramatic absorption increase and a reduction of Eg, down to less than 1.8 eV. A prototypal solar cell has been fabricated using a 400 nm thick, p-i-n structure made of Si:O alloy embedded within flat transparent c…

Open circuit voltageSiliconAbsorption co-efficientMaterials scienceAnnealing (metallurgy)Analytical chemistryGeneral Physics and AstronomyPhotovoltaic effectChemical vapor depositionSettore ING-INF/01 - Elettronicalaw.inventionPlasma enhanced chemical vapor depositionOut-diffusionPlasma-enhanced chemical vapor depositionlawSolar cellDoping (additives)Thin filmAbsorption (electromagnetic radiation)Infrared spectroscopyElectrical analysiDopantDopingP-i-n structureDevice fabricationThermal-annealingSolar cells Silicon alloysPhotovoltaicTransparent conductive oxides Cerium alloyJournal of Applied Physics
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